inchange semiconductor isc rf product specification isc silicon npn rf transistor 2sC2026 description low noise nf= 3.0db typ. @ f= 500mhz high power gain g pe = 15db typ. @ f= 500mhz high gain bandwidth product f t = 2.0ghz typ. applications designed for use in low noise amplifiers in the vhf~uhf band. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 30 v v ceo collector-emitter voltage 14 v v ebo emitter-base voltage 3 v i c collector current-continuous 50 ma p c collector power dissipation @t c =25 0.25 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc rf product specification isc silicon npn rf transistor 2sC2026 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit i cbo collector cutoff current v cb = 15v; i e = 0 0.1 a i ebo emitter cutoff current v eb = 2v; i c = 0 0.1 a h fe dc current gain i c = 10ma ; v ce = 10v 25 200 f t current-gain?bandwidth product i c = 10ma ; v ce = 10v 15 2.0 ghz c ob output capacitance i e = 0 ; v cb = 10v; f= 1.0mhz 0.75 1.1 pf g pe power gain v ce = 10 v,i c = 10ma; f= 500mhz 13 15 db nf noise figure v ce = 10 v,i c = 3ma; f= 500mhz; r g = 50 3 4 db isc website www.iscsemi.cn 2
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